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BUK6Y19-30PX

BUK6Y19-30PX Nexperia USA Inc.


BUK6Y19-30P.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.95 EUR
3000+ 0.9 EUR
7500+ 0.85 EUR
10500+ 0.81 EUR
Mindestbestellmenge: 1500
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Technische Details BUK6Y19-30PX Nexperia USA Inc.

Description: MOSFET P-CH 30V 45A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BUK6Y19-30PX nach Preis ab 1.17 EUR bis 2.16 EUR

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BUK6Y19-30PX BUK6Y19-30PX Hersteller : Nexperia USA Inc. BUK6Y19-30P.pdf Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 13380 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
15+ 1.77 EUR
100+ 1.38 EUR
500+ 1.17 EUR
Mindestbestellmenge: 13
BUK6Y19-30PX BUK6Y19-30PX Hersteller : Nexperia BUK6Y19-30P-1839870.pdf MOSFET BUK6Y19-30PX
auf Bestellung 3892 Stücke:
Lieferzeit 14-28 Tag (e)
BUK6Y19-30PX BUK6Y19-30PX Hersteller : Nexperia buk6y19-30p.pdf Trans MOSFET P-CH 30V 45A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
BUK6Y19-30PX BUK6Y19-30PX Hersteller : Nexperia buk6y19-30p.pdf Trans MOSFET P-CH 30V 45A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
BUK6Y19-30PX Hersteller : NEXPERIA buk6y19-30p.pdf Trans MOSFET P-CH 30V 45A Automotive 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
BUK6Y19-30PX Hersteller : NEXPERIA BUK6Y19-30P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -181A
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: -30V
Drain current: -32A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y19-30PX Hersteller : NEXPERIA BUK6Y19-30P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -181A
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: -30V
Drain current: -32A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Produkt ist nicht verfügbar