BUK6Y19-30PX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.66 EUR |
| 3000+ | 0.59 EUR |
| 4500+ | 0.58 EUR |
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Technische Details BUK6Y19-30PX Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK6Y19-30PX nach Preis ab 0.58 EUR bis 2.45 EUR
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BUK6Y19-30PX | Hersteller : Nexperia |
MOSFETs BUK6Y19-30P/SOT669/LFPAK |
auf Bestellung 1518 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y19-30PX | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 45A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 9063 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y19-30PX | Hersteller : Nexperia |
Trans MOSFET P-CH 30V 45A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK6Y19-30PX | Hersteller : Nexperia |
Trans MOSFET P-CH 30V 45A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK6Y19-30PX | Hersteller : NEXPERIA |
Trans MOSFET P-CH 30V 45A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK6Y19-30PX | Hersteller : NEXPERIA |
BUK6Y19-30PX SMD P channel transistors |
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