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BUK752R3-40E,127

BUK752R3-40E,127 NXP Semiconductors


BUK752R3-40E.pdf Hersteller: NXP Semiconductors
Description: NEXPERIA BUK752R3-40E - 120A, 40
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1270 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
333+2.13 EUR
Mindestbestellmenge: 333
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Technische Details BUK752R3-40E,127 NXP Semiconductors

Description: MOSFET N-CH 40V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Power Dissipation (Max): 293W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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BUK752R3-40E,127 BUK752R3-40E,127 Hersteller : Nexperia BUK752R3-40E.pdf MOSFET BUK752R3-40E/SIL3P/STANDARD MA
auf Bestellung 995 Stücke:
Lieferzeit 14-28 Tag (e)
BUK752R3-40E,127 BUK752R3-40E,127 Hersteller : NEXPERIA 3012570105858446buk752r3-40e.pdf Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-220AB Rail
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BUK752R3-40E,127 BUK752R3-40E,127 Hersteller : Nexperia USA Inc. BUK752R3-40E.pdf Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar