BUK752R3-40E,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BUK752R3-40E - 120A, 40
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 151+ | 3.02 EUR |
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Technische Details BUK752R3-40E,127 Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 293W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote BUK752R3-40E,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BUK752R3-40E,127 | Hersteller : Nexperia |
MOSFET BUK752R3-40E/SIL3P/STANDARD MA |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK752R3-40E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A TO220AB Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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