BUK768R1-100E,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.68 EUR |
| 1600+ | 2.28 EUR |
| 2400+ | 2.16 EUR |
| 5600+ | 2.08 EUR |
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Technische Details BUK768R1-100E,118 Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK768R1-100E,118 nach Preis ab 3.17 EUR bis 5.35 EUR
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BUK768R1-100E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6882 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK768R1-100E,118 | Hersteller : Nexperia |
MOSFET BUK768R1-100E/SOT404/D2PAK |
auf Bestellung 3208 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK768R1-100E,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| BUK768R1-100E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W Kind of package: reel; tape On-state resistance: 21.9mΩ Drain current: 78A Drain-source voltage: 100V Case: D2PAK; SOT404 Gate charge: 108nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 439A Application: automotive industry Power dissipation: 263W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK768R1-100E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W Kind of package: reel; tape On-state resistance: 21.9mΩ Drain current: 78A Drain-source voltage: 100V Case: D2PAK; SOT404 Gate charge: 108nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 439A Application: automotive industry Power dissipation: 263W Polarisation: unipolar |
Produkt ist nicht verfügbar |