BUK768R1-100E,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 800+ | 2.51 EUR |
| 1600+ | 2.34 EUR |
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Technische Details BUK768R1-100E,118 Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK768R1-100E,118 nach Preis ab 2.15 EUR bis 7.08 EUR
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BUK768R1-100E,118 | Hersteller : Nexperia |
MOSFETs BUK768R1-100E/SOT404/D2PAK |
auf Bestellung 2782 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK768R1-100E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7389 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK768R1-100E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 108nC On-state resistance: 21.9mΩ Drain current: 78A Power dissipation: 263W Gate-source voltage: ±20V Pulsed drain current: 439A Drain-source voltage: 100V Application: automotive industry Case: D2PAK; SOT404 |
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