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BUK768R1-100E,118

BUK768R1-100E,118 Nexperia USA Inc.


BUK768R1-100E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.05 EUR
1600+1.91 EUR
2400+1.90 EUR
Mindestbestellmenge: 800
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Technische Details BUK768R1-100E,118 Nexperia USA Inc.

Description: MOSFET N-CH 100V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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BUK768R1-100E,118 BUK768R1-100E,118 Hersteller : Nexperia BUK768R1_100E-2937951.pdf MOSFETs BUK768R1-100E/SOT404/D2PAK
auf Bestellung 2782 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.65 EUR
10+3.85 EUR
100+3.08 EUR
250+2.90 EUR
500+2.69 EUR
800+2.25 EUR
2400+2.15 EUR
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BUK768R1-100E,118 BUK768R1-100E,118 Hersteller : Nexperia USA Inc. BUK768R1-100E.pdf Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.76 EUR
10+3.77 EUR
100+2.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R1-100E,118 BUK768R1-100E,118 Hersteller : NEXPERIA 3013218248681786buk768r1-100e.pdf Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
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BUK768R1-100E,118 Hersteller : NEXPERIA BUK768R1-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 439A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 78A
On-state resistance: 21.9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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BUK768R1-100E,118 Hersteller : NEXPERIA BUK768R1-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 439A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 78A
On-state resistance: 21.9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH