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BUK7E13-60E,127

BUK7E13-60E,127 Nexperia USA Inc.


BUK7E13-60E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.34 EUR
14+ 1.92 EUR
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Technische Details BUK7E13-60E,127 Nexperia USA Inc.

Description: MOSFET N-CH 60V 58A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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BUK7E13-60E,127 BUK7E13-60E,127 Hersteller : Nexperia BUK7E13-60E.pdf MOSFET N-channel TrenchMOS standard level FET
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