BUK7E13-60E,127 Nexperia
| Anzahl | Privatkunde |
|---|---|
| 406+ | 1.64 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.32 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
406 Stücke
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Technische Details BUK7E13-60E,127 Nexperia
Description: MOSFET N-CH 60V 58A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7E13-60E,127 nach Preis ab 0.77 EUR bis 1.87 EUR
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BUK7E13-60E,127 | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 58A I2PAKPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4794 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK7E13-60E,127 | NXP Semiconductors |
Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BUK7E13-60E,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 58A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4794 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 291+ | 1.87 EUR |
| BUK7E13-60E,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 789+ | 0.84 EUR |
| 1000+ | 0.77 EUR |