BUK7E13-60E,127 Nexperia
| Anzahl | Privatkunde |
|---|---|
| 406+ | 1.63 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.3 EUR |
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Technische Details BUK7E13-60E,127 Nexperia
Description: MOSFET N-CH 60V 58A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK7E13-60E,127 nach Preis ab 0.76 EUR bis 1.87 EUR
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BUK7E13-60E,127 | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 58A I2PAKVgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: I2PAK |
auf Bestellung 4794 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK7E13-60E,127 | NXP Semiconductors |
Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BUK7E13-60E,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: I2PAK
Description: MOSFET N-CH 60V 58A I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: I2PAK
auf Bestellung 4794 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 291+ | 1.87 EUR |
| BUK7E13-60E,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 789+ | 0.83 EUR |
| 1000+ | 0.76 EUR |