BUK7K23-80EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 80V 17A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1542pF @ 25V
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 17A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1542pF @ 25V
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.43 EUR |
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Technische Details BUK7K23-80EX Nexperia USA Inc.
Description: NEXPERIA - BUK7K23-80EX - Dual-MOSFET, n-Kanal, 80 V, 80 V, 17 A, 17 A, 0.0176 ohm, tariffCode: 85412900, rohsCompliant: Y-EX, Dauer-Drainstrom Id, p-Kanal: 17A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 80V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 17A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0176ohm, Verlustleistung, p-Kanal: 53W, Drain-Source-Spannung Vds, n-Kanal: 80V, euEccn: NLR, Bauform - Transistor: SOT-1205, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0176ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 53W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote BUK7K23-80EX nach Preis ab 1.76 EUR bis 3.28 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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BUK7K23-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 80V 17A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1542pF @ 25V Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4075 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK7K23-80EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK7K23-80EX - Dual-MOSFET, n-Kanal, 80 V, 80 V, 17 A, 17 A, 0.0176 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 17A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0176ohm Verlustleistung, p-Kanal: 53W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: SOT-1205 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0176ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 53W Betriebstemperatur, max.: 175°C |
auf Bestellung 2839 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7K23-80EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK7K23-80EX - Dual-MOSFET, n-Kanal, 80 V, 80 V, 17 A, 17 A, 0.0176 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 17A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0176ohm Verlustleistung, p-Kanal: 53W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: SOT-1205 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0176ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 53W Betriebstemperatur, max.: 175°C |
auf Bestellung 2839 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7K23-80EX | Hersteller : NEXPERIA | Trans MOSFET N-CH 80V 17A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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BUK7K23-80EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 68A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 22.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7K23-80EX | Hersteller : Nexperia | MOSFET BUK7K23-80E/SOT1205/LFPAK56D |
Produkt ist nicht verfügbar |
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BUK7K23-80EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 68A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 22.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |