BUK7Y14-80EX NEXPERIA
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 46A
Pulsed drain current: 259A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.1mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 46A
Pulsed drain current: 259A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.1mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1463 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.33 EUR |
68+ | 1.06 EUR |
85+ | 0.84 EUR |
90+ | 0.8 EUR |
500+ | 0.78 EUR |
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Produktbewertung abgeben
Technische Details BUK7Y14-80EX NEXPERIA
Description: MOSFET N-CH 80V 65A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y14-80EX nach Preis ab 0.78 EUR bis 2.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7Y14-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 46A Pulsed drain current: 259A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 35.1mΩ Mounting: SMD Gate charge: 44.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 1463 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y14-80EX | Hersteller : Nexperia | MOSFET BUK7Y14-80E/SOT669/LFPAK |
auf Bestellung 3527 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK7Y14-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 65A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK7Y14-80EX | Hersteller : NEXPERIA | Trans MOSFET N-CH 80V 65A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y14-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 65A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |