BUK7Y14-80EX NEXPERIA
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 44.8nC
On-state resistance: 35.1mΩ
Power dissipation: 147W
Drain current: 46A
Drain-source voltage: 80V
Pulsed drain current: 259A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 65+ | 1.1 EUR |
| 72+ | 1 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.89 EUR |
| 500+ | 0.79 EUR |
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Technische Details BUK7Y14-80EX NEXPERIA
Description: MOSFET N-CH 80V 65A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 147W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7Y14-80EX nach Preis ab 0.86 EUR bis 3.08 EUR
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BUK7Y14-80EX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 65A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y14-80EX | Nexperia |
MOSFETs SOT669 N-CH 80V 65A |
auf Bestellung 4142 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK7Y14-80EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 65A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 65A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 13+ | 1.42 EUR |
| 100+ | 1.11 EUR |
| BUK7Y14-80EX |
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Hersteller: Nexperia
MOSFETs SOT669 N-CH 80V 65A
MOSFETs SOT669 N-CH 80V 65A
auf Bestellung 4142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 50+ | 1.47 EUR |
| 100+ | 1.34 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.32 EUR |
| 1500+ | 0.86 EUR |