BUK7Y19-100EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.8 EUR |
3000+ | 0.76 EUR |
Produktrezensionen
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Technische Details BUK7Y19-100EX Nexperia USA Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W, Mounting: SMD, Application: automotive industry, Polarisation: unipolar, Kind of package: reel; tape, Case: LFPAK56; PowerSO8; SOT669, Type of transistor: N-MOSFET, Power dissipation: 169W, Gate charge: 55nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 225A, Drain-source voltage: 100V, Drain current: 40A, On-state resistance: 52.6mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BUK7Y19-100EX nach Preis ab 0.99 EUR bis 1.83 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7Y19-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V LFPAK56-SO8 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Power Dissipation (Max): 169W (Tc) Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Qualification: AEC-Q101 |
auf Bestellung 5917 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y19-100EX | Hersteller : Nexperia | MOSFET 100V N-CH 19 STD LEVEL |
auf Bestellung 1718 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y19-100EX | Hersteller : NEXPERIA | Trans MOSFET N-CH 100V 56A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y19-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Power dissipation: 169W Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 225A Drain-source voltage: 100V Drain current: 40A On-state resistance: 52.6mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7Y19-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Power dissipation: 169W Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 225A Drain-source voltage: 100V Drain current: 40A On-state resistance: 52.6mΩ |
Produkt ist nicht verfügbar |