BUK7Y19-100EX Nexperia
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.66 EUR |
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Technische Details BUK7Y19-100EX Nexperia
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 55nC, On-state resistance: 52.6mΩ, Drain current: 40A, Power dissipation: 169W, Gate-source voltage: ±20V, Pulsed drain current: 225A, Drain-source voltage: 100V, Application: automotive industry, Case: LFPAK56; PowerSO8; SOT669, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BUK7Y19-100EX nach Preis ab 0.75 EUR bis 2.75 EUR
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BUK7Y19-100EX | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 56A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y19-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V LFPAK56-SO8 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Power Dissipation (Max): 169W (Tc) Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3700 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y19-100EX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 56A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y19-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V LFPAK56-SO8 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Power Dissipation (Max): 169W (Tc) Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4212 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y19-100EX | Hersteller : Nexperia |
MOSFET 100V N-CH 19 STD LEVEL |
auf Bestellung 1718 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y19-100EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 56A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y19-100EX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 56A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK7Y19-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 55nC On-state resistance: 52.6mΩ Drain current: 40A Power dissipation: 169W Gate-source voltage: ±20V Pulsed drain current: 225A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y19-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 55nC On-state resistance: 52.6mΩ Drain current: 40A Power dissipation: 169W Gate-source voltage: ±20V Pulsed drain current: 225A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |