BUK7Y19-100EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Power Dissipation (Max): 169W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Qualification: AEC-Q101
Grade: Automotive
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Technische Details BUK7Y19-100EX Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8, Power Dissipation (Max): 169W (Tc), Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK7Y19-100EX nach Preis ab 1.43 EUR bis 3.36 EUR
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BUK7Y19-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V LFPAK56-SO8 Supplier Device Package: LFPAK56, Power-SO8 Power Dissipation (Max): 169W (Tc) Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 2552 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y19-100EX | Nexperia |
MOSFET 100V N-CH 19 STD LEVEL |
auf Bestellung 1718 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BUK7Y19-100EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Supplier Device Package: LFPAK56, Power-SO8
Power Dissipation (Max): 169W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 100V LFPAK56-SO8
Supplier Device Package: LFPAK56, Power-SO8
Power Dissipation (Max): 169W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2552 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.36 EUR |
| 10+ | 2.13 EUR |
| 50+ | 1.6 EUR |
| 100+ | 1.43 EUR |
| BUK7Y19-100EX |
|
Hersteller: Nexperia
MOSFET 100V N-CH 19 STD LEVEL
MOSFET 100V N-CH 19 STD LEVEL
auf Bestellung 1718 Stücke:
Lieferzeit 10-14 Tag (e)