BUK7Y19-100EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.86 EUR |
3000+ | 0.81 EUR |
Produktrezensionen
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Technische Details BUK7Y19-100EX Nexperia USA Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 40A, Pulsed drain current: 225A, Power dissipation: 169W, Case: LFPAK56; PowerSO8; SOT669, Gate-source voltage: ±20V, On-state resistance: 52.6mΩ, Mounting: SMD, Gate charge: 55nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BUK7Y19-100EX nach Preis ab 1.06 EUR bis 1.95 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7Y19-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V LFPAK56-SO8 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Power Dissipation (Max): 169W (Tc) Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Qualification: AEC-Q101 |
auf Bestellung 5970 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y19-100EX | Hersteller : Nexperia | MOSFET 100V N-CH 19 STD LEVEL |
auf Bestellung 1718 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK7Y19-100EX | Hersteller : NEXPERIA | Trans MOSFET N-CH 100V 56A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y19-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 225A Power dissipation: 169W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 52.6mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7Y19-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 225A Power dissipation: 169W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 52.6mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |