BUK9K22-80EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 80V 21A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3115pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 21A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3115pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9K22-80EX Nexperia USA Inc.
Description: NEXPERIA - BUK9K22-80EX - Dual-MOSFET, n-Kanal, 80 V, 80 V, 21 A, 21 A, 0.0157 ohm, tariffCode: 85412900, rohsCompliant: Y-EX, Dauer-Drainstrom Id, p-Kanal: 21A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 80V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 21A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0157ohm, Verlustleistung, p-Kanal: 64W, Drain-Source-Spannung Vds, n-Kanal: 80V, euEccn: NLR, Bauform - Transistor: SOT-1205, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0157ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 64W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote BUK9K22-80EX nach Preis ab 2.09 EUR bis 4.21 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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BUK9K22-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 80V 21A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3115pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2224 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9K22-80EX | Hersteller : Nexperia | MOSFET BUK9K22-80E/SOT1205/LFPAK56D |
auf Bestellung 820 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9K22-80EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9K22-80EX - Dual-MOSFET, n-Kanal, 80 V, 80 V, 21 A, 21 A, 0.0157 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0157ohm Verlustleistung, p-Kanal: 64W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: SOT-1205 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0157ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 64W Betriebstemperatur, max.: 175°C |
auf Bestellung 5415 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K22-80EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9K22-80EX - Dual-MOSFET, n-Kanal, 80 V, 80 V, 21 A, 21 A, 0.0157 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0157ohm Verlustleistung, p-Kanal: 64W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: SOT-1205 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0157ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 64W Betriebstemperatur, max.: 175°C |
auf Bestellung 5415 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K22-80EX | Hersteller : Nexperia | Trans MOSFET N-CH 80V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK9K22-80EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W Case: LFPAK33; SOT1210 Polarisation: unipolar Application: automotive industry Power dissipation: 64W Kind of package: reel; tape Gate charge: 23.1nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 84A Mounting: SMD Drain-source voltage: 80V Drain current: 15A On-state resistance: 54.5mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9K22-80EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W Case: LFPAK33; SOT1210 Polarisation: unipolar Application: automotive industry Power dissipation: 64W Kind of package: reel; tape Gate charge: 23.1nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 84A Mounting: SMD Drain-source voltage: 80V Drain current: 15A On-state resistance: 54.5mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |