auf Bestellung 2459 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 2.51 EUR |
| 26+ | 2.05 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.23 EUR |
| 1500+ | 1.05 EUR |
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Technische Details BUK9K89-100E,115 Nexperia
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 38W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12.5A, Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V, Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9K89-100E,115 nach Preis ab 1.42 EUR bis 2.63 EUR
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BUK9K89-100E,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 100V 12.5A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1325 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9K89-100E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 12.5A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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| BUK9K89-100E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 8.9A On-state resistance: 245mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 38W Polarisation: unipolar Gate charge: 16.8nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9K89-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9K89-100E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 8.9A On-state resistance: 245mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 38W Polarisation: unipolar Gate charge: 16.8nC Kind of channel: enhanced Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |