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BUK9K89-100E,115

BUK9K89-100E,115 Nexperia


3012549411890276buk9k89-100e.pdf Hersteller: Nexperia
Trans MOSFET N-CH 100V 12.5A Automotive AEC-Q101 8-Pin LFPAK-D T/R
auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BUK9K89-100E,115 Nexperia

Description: MOSFET 2N-CH 100V 12.5A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 38W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12.5A, Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V, Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BUK9K89-100E,115 nach Preis ab 0.52 EUR bis 2.60 EUR

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BUK9K89-100E,115 BUK9K89-100E,115 Hersteller : Nexperia 3012549411890276buk9k89-100e.pdf Trans MOSFET N-CH 100V 12.5A Automotive AEC-Q101 8-Pin LFPAK-D T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 BUK9K89-100E,115 Hersteller : Nexperia BUK9K89-100E.pdf MOSFETs Dual N-channel 40 V, 9.4 mΩ logic level MOSFET
auf Bestellung 1807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.81 EUR
10+1.21 EUR
100+0.92 EUR
500+0.81 EUR
1000+0.73 EUR
1500+0.67 EUR
3000+0.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 BUK9K89-100E,115 Hersteller : Nexperia USA Inc. BUK9K89-100E.pdf Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 BUK9K89-100E,115 Hersteller : NEXPERIA 3012549411890276buk9k89-100e.pdf Trans MOSFET N-CH 100V 12.5A Automotive 8-Pin LFPAK-D T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 BUK9K89-100E,115 Hersteller : Nexperia 3012549411890276buk9k89-100e.pdf Trans MOSFET N-CH 100V 12.5A Automotive AEC-Q101 8-Pin LFPAK-D T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 Hersteller : NEXPERIA BUK9K89-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 BUK9K89-100E,115 Hersteller : Nexperia USA Inc. BUK9K89-100E.pdf Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 Hersteller : NEXPERIA BUK9K89-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH