BUK9K89-100E,115 Nexperia
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9K89-100E,115 Nexperia
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 38W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12.5A, Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V, Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9K89-100E,115 nach Preis ab 0.52 EUR bis 2.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BUK9K89-100E,115 | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 12.5A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
BUK9K89-100E,115 | Hersteller : Nexperia |
MOSFETs Dual N-channel TrenchMOS logic level FET |
auf Bestellung 1807 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
BUK9K89-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1265 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
BUK9K89-100E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 12.5A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
BUK9K89-100E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 12.5A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| BUK9K89-100E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.9A Pulsed drain current: 50A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 245mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
BUK9K89-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
| BUK9K89-100E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.9A Pulsed drain current: 50A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 245mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |