BUK9M11-40HX Nexperia
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 293+ | 0.53 EUR |
| 299+ | 0.51 EUR |
| 304+ | 0.48 EUR |
| 309+ | 0.45 EUR |
| 315+ | 0.43 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9M11-40HX Nexperia
Description: MOSFET N-CH 40V 35A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Power Dissipation (Max): 50W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M11-40HX nach Preis ab 0.38 EUR bis 2.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BUK9M11-40HX | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 35A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
BUK9M11-40HX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 35A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
BUK9M11-40HX | Hersteller : Nexperia |
MOSFET BUK9M11-40H/SOT1210/mLFPAK |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
BUK9M11-40HX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 35A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5849 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
BUK9M11-40HX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M11-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 35 A, 0.009 ohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.85V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: LFPAK Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm |
auf Bestellung 2203 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
BUK9M11-40HX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M11-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 35 A, 0.009 ohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.85V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: LFPAK Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm |
auf Bestellung 2203 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| BUK9M11-40HX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 35A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
BUK9M11-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 35A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
BUK9M11-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 35A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| BUK9M11-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 50W Application: automotive industry Drain-source voltage: 40V Drain current: 34A On-state resistance: 27.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Pulsed drain current: 193A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| BUK9M11-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 50W Application: automotive industry Drain-source voltage: 40V Drain current: 34A On-state resistance: 27.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Pulsed drain current: 193A |
Produkt ist nicht verfügbar |