BYG10Y-M3/TR Vishay General Semiconductor
auf Bestellung 4689 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.14 EUR |
| 54+ | 0.98 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.43 EUR |
| 1800+ | 0.39 EUR |
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Technische Details BYG10Y-M3/TR Vishay General Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 1.6kV, Load current: 1.5A, Reverse recovery time: 4µs, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Case: SMA, Max. forward voltage: 1.15V, Max. forward impulse current: 30A, Leakage current: 10µA, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BYG10Y-M3/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BYG10Y-M3/TR | Hersteller : Vishay |
 Diode Switching 1.6KV 1.5A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG10Y-M3/TR | Hersteller : Vishay |
Diode Switching 1.6KV 1.5A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG10Y-M3/TR | Hersteller : Vishay |
Diode Switching 1.6KV 1.5A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG10Y-M3/TR | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BYG10Y-M3/TR | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1.6KV 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V |
Produkt ist nicht verfügbar |
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BYG10Y-M3/TR | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1.6KV 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V |
Produkt ist nicht verfügbar |
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BYG10Y-M3/TR | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |