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BYG10Y-M3/TR

BYG10Y-M3/TR Vishay General Semiconductor

BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
Hersteller: Vishay General Semiconductor
Rectifiers 1.5A,1600V VGSC-STD Avalanche SMD
auf Bestellung 11455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.01 EUR
10+0.65 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.27 EUR
1800+0.24 EUR
3600+0.21 EUR
Mindestbestellmenge: 3 Stücke
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Technische Details BYG10Y-M3/TR Vishay General Semiconductor

Description: DIODE AVAL 1.6KV 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 1600 V.

Weitere Produktangebote BYG10Y-M3/TR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BYG10Y-M3/TR BYG10Y-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG10Y-M3/TR BYG10Y-M3/TR Vishay General Semiconductor - Diodes Division BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYG10Y-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10Y-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG10Y-M3/TR BYG10D%2CG%2CJ%2CK%2CM%2CY.pdf
BYG10Y-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH