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BYT52M-TAP

BYT52M-TAP VISHAY


byt52.pdf Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.15mA
Reverse recovery time: 200ns
auf Bestellung 16821 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
168+0.43 EUR
190+ 0.38 EUR
210+ 0.34 EUR
247+ 0.29 EUR
262+ 0.27 EUR
Mindestbestellmenge: 168
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Technische Details BYT52M-TAP VISHAY

Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 1kV, Load current: 1A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.3V, Leakage current: 0.15mA, Reverse recovery time: 200ns, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote BYT52M-TAP nach Preis ab 0.27 EUR bis 0.43 EUR

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Preis ohne MwSt
BYT52M-TAP BYT52M-TAP Hersteller : VISHAY byt52.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.15mA
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16821 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
168+0.43 EUR
190+ 0.38 EUR
210+ 0.34 EUR
247+ 0.29 EUR
262+ 0.27 EUR
Mindestbestellmenge: 168
BYT52M-TAP BYT52M-TAP Hersteller : Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
BYT52M-TAP BYT52M-TAP Hersteller : Vishay byt52.pdf Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo
Produkt ist nicht verfügbar
BYT52M-TAP BYT52M-TAP Hersteller : Vishay byt52.pdf Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo
Produkt ist nicht verfügbar
BYT52M-TAP BYT52M-TAP Hersteller : Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
BYT52M-TAP BYT52M-TAP Hersteller : Vishay Semiconductors byt52.pdf Rectifiers 1.4 Amp 1000 Volt 50 Amp IFSM
Produkt ist nicht verfügbar