BYT52M-TAP VISHAY
Hersteller: VISHAYCategory: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 200ns
Leakage current: 0.15mA
auf Bestellung 4672 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 177+ | 0.4 EUR |
| 200+ | 0.36 EUR |
| 221+ | 0.32 EUR |
| 247+ | 0.29 EUR |
| 261+ | 0.27 EUR |
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Technische Details BYT52M-TAP VISHAY
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 1kV, Load current: 1A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.3V, Reverse recovery time: 200ns, Leakage current: 0.15mA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BYT52M-TAP nach Preis ab 0.27 EUR bis 0.4 EUR
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BYT52M-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.3V Reverse recovery time: 200ns Leakage current: 0.15mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4672 Stücke: Lieferzeit 7-14 Tag (e) |
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BYT52M-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 1.4A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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BYT52M-TAP | Hersteller : Vishay |
Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo |
Produkt ist nicht verfügbar |
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BYT52M-TAP | Hersteller : Vishay |
Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo |
Produkt ist nicht verfügbar |
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BYT52M-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 1.4A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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BYT52M-TAP | Hersteller : Vishay Semiconductors |
Rectifiers 1.4 Amp 1000 Volt 50 Amp IFSM |
Produkt ist nicht verfügbar |