auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
50+ | 12.86 EUR |
100+ | 10.4 EUR |
250+ | 9.98 EUR |
500+ | 8.52 EUR |
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Produktbewertung abgeben
Technische Details C3M0160120J Wolfspeed
Description: SICFET N-CH 1200V 17A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V.
Weitere Produktangebote C3M0160120J nach Preis ab 8.52 EUR bis 18.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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C3M0160120J | Hersteller : Wolfspeed | 1200V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0160120J | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 17A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 2.33mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V |
auf Bestellung 3251 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0160120J | Hersteller : Wolfspeed | MOSFET SiC, MOSFET, 160mohm, 1200V, TO-263-7, Industrial |
auf Bestellung 1395 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0160120J | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0160120J | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
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C3M0160120J | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
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C3M0160120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Mounting: SMD Case: D2PAK-7 Polarisation: unipolar Power dissipation: 90W Features of semiconductor devices: Kelvin terminal Gate charge: 24nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Pulsed drain current: 34A Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 256mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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C3M0160120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Mounting: SMD Case: D2PAK-7 Polarisation: unipolar Power dissipation: 90W Features of semiconductor devices: Kelvin terminal Gate charge: 24nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Pulsed drain current: 34A Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 256mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |