auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 13.29 EUR |
| 100+ | 10.75 EUR |
| 250+ | 10.32 EUR |
| 500+ | 8.8 EUR |
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Technische Details C3M0160120J Wolfspeed
Description: SICFET N-CH 1200V 17A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V.
Weitere Produktangebote C3M0160120J nach Preis ab 8.8 EUR bis 26.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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C3M0160120J | Hersteller : Wolfspeed |
 1200V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0160120J | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 17A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 2.33mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V |
auf Bestellung 3251 Stücke: Lieferzeit 21-28 Tag (e) |
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C3M0160120J | Hersteller : Wolfspeed |
MOSFET SiC, MOSFET, 160mO, 1200V, TO-263-7, Industrial, Gen 3 |
auf Bestellung 1478 Stücke: Lieferzeit 14-28 Tag (e) |
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| C3M0160120J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0160120J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
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C3M0160120J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| C3M0160120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 34A Power dissipation: 90W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 256mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| C3M0160120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 34A Power dissipation: 90W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 256mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |