| Anzahl | Privatkunde |
|---|---|
| 1000+ | 10.98 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1000 Stücke
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Produktbewertung abgeben
Technische Details C3M0160120J Wolfspeed
Description: SICFET N-CH 1200V 17A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V.
Weitere Produktangebote C3M0160120J nach Preis ab 6.26 EUR bis 16.42 EUR
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C3M0160120J | Wolfspeed |
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C3M0160120J | Wolfspeed |
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auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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1200V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0160120J | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 17A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 2.33mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V |
auf Bestellung 1930 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3M0160120J |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 10.98 EUR |
| C3M0160120J |
|
Hersteller: Wolfspeed
SiC MOSFETs SiC, MOSFET, 160m, 1200V, TO-263-7, Industrial
SiC MOSFETs SiC, MOSFET, 160m, 1200V, TO-263-7, Industrial
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.08 EUR |
| 10+ | 7.58 EUR |
| 100+ | 6.94 EUR |
| 500+ | 6.26 EUR |
| C3M0160120J |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 14.96 EUR |
| C3M0160120J |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK
Trans MOSFET N-CH SiC 1.2KV 17A 8-Pin(7+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 14.96 EUR |
| C3M0160120J |
|
Hersteller: Wolfspeed
1200V silicon carbide MOSFET technology optimized for high performance power electronics applications
1200V silicon carbide MOSFET technology optimized for high performance power electronics applications
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 14.97 EUR |
| 100+ | 12.38 EUR |
| 250+ | 12.07 EUR |
| 500+ | 10.46 EUR |
| C3M0160120J |
|
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.42 EUR |
| 50+ | 8.98 EUR |
| 100+ | 8.27 EUR |
| 500+ | 7.01 EUR |
| 1000+ | 6.88 EUR |