C3M0160120J Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.15 EUR |
| 10+ | 7.08 EUR |
| 100+ | 6.5 EUR |
| 500+ | 6.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C3M0160120J Wolfspeed
Description: SICFET N-CH 1200V 17A TO263-7, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA.
Weitere Produktangebote C3M0160120J nach Preis ab 6.88 EUR bis 16.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
C3M0160120J | Wolfspeed, Inc. |
 Description: SICFET N-CH 1200V 17A TO263-7Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +15V, -4V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.6V @ 2.33mA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
auf Bestellung 1930 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3M0160120J |
|
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.42 EUR |
| 50+ | 8.98 EUR |
| 100+ | 8.27 EUR |
| 500+ | 7.01 EUR |
| 1000+ | 6.88 EUR |