CEDM7001 TR

CEDM7001 TR

CEDM7001 TR

Hersteller: Central Semiconductor
MOSFET N-Channel MOSFET 20V 100mA
cedm7001-18029.pdf
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auf Bestellung 31266 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details CEDM7001 TR

Description: MOSFET N-CH 20V 0.1A SOT-883, Supplier Device Package: SOT-883, Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Power - Max: 100mW, Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 3V, Gate Charge (Qg) (Max) @ Vgs: 0.57nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Drain to Source Voltage (Vdss): 20V, FET Type: MOSFET N-Channel, Metal Oxide.

Preis CEDM7001 TR ab 0 EUR bis 0 EUR

CEDM7001 TR
CEDM7001 TR
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 0.1A SOT-883
Supplier Device Package: SOT-883
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 100mW
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 3V
Gate Charge (Qg) (Max) @ Vgs: 0.57nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
CEDM7001.PDF
auf Bestellung 11632 Stücke
Lieferzeit 21-28 Tag (e)
CEDM7001 TR
CEDM7001 TR
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 0.1A SOT-883
Supplier Device Package: SOT-883
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 100mW
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 3V
Gate Charge (Qg) (Max) @ Vgs: 0.57nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
CEDM7001.PDF
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CEDM7001 TR
CEDM7001 TR
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 0.1A SOT-883
Power - Max: 100mW
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 3V
Gate Charge (Qg) (Max) @ Vgs: 0.57nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SOT-883
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
CEDM7001.PDF
auf Bestellung 11632 Stücke
Lieferzeit 21-28 Tag (e)