CPC3960ZTR Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 600V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 44Ohm @ 100mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 58000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.66 EUR |
| 2000+ | 0.61 EUR |
| 3000+ | 0.58 EUR |
| 5000+ | 0.55 EUR |
| 7000+ | 0.53 EUR |
| 10000+ | 0.51 EUR |
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Technische Details CPC3960ZTR Littelfuse Inc.
Description: MOSFET N-CH 600V SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 125°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 44Ohm @ 100mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.
Weitere Produktangebote CPC3960ZTR nach Preis ab 0.52 EUR bis 2.24 EUR
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CPC3960ZTR | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.1A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 44Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted Anzahl je Verpackung: 1 Stücke |
auf Bestellung 947 Stücke: Lieferzeit 7-14 Tag (e) |
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CPC3960ZTR | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.1A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 44Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
auf Bestellung 947 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC3960ZTR | Hersteller : IXYS Integrated Circuits |
MOSFET 600V N-Channel Depletion-Mode FET |
auf Bestellung 159 Stücke: Lieferzeit 10-14 Tag (e) |
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CPC3960ZTR | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 44Ohm @ 100mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 58934 Stücke: Lieferzeit 10-14 Tag (e) |
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