EMD12 T2R

verfügbar/auf Bestellung
auf Bestellung 823 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 823 Stücke

Lieferzeit 14-28 Tag (e)
Technische Details EMD12T2R
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6, Part Status: Active, Supplier Device Package: EMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Preis EMD12T2R ab 0.29 EUR bis 1.17 EUR
EMD12T2R Hersteller: Rohm Semiconductor Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount ![]() |
auf Bestellung 1989 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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EMD12 T2R Hersteller: RHOM sot-563 04+ |
11038 Stücke |
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EMD12T2R Hersteller: Rohm Semiconductor Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Part Status: Active Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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EMD12T2R Hersteller: Rohm Semiconductor Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Supplier Device Package: EMT6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Power - Max: 150mW Frequency - Transition: 250MHz Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) ![]() |
auf Bestellung 746 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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