EMD12 T2R

EMD12T2R

Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased PNP/NPN 50V 30MA

verfügbar/auf Bestellung
auf Bestellung 823 Stücke
Lieferzeit 14-28 Tag (e)

45+	1.16 EUR
60+	0.87 EUR
100+	0.54 EUR
500+	0.37 EUR

Technische Details EMD12T2R

Description: TRANS NPN/PNP PREBIAS 0.15W EMT6, Part Status: Active, Supplier Device Package: EMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Preis EMD12T2R ab 0.29 EUR bis 1.17 EUR

EMD12T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount

auf Bestellung 1989 Stücke
Lieferzeit 21-28 Tag (e)

23+	1.17 EUR
30+	0.88 EUR
100+	0.55 EUR
500+	0.38 EUR
1000+	0.29 EUR

EMD12 T2R
Hersteller: RHOM
sot-563 04+

11038 Stücke

EMD12T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Part Status: Active
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

EMD12T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)

auf Bestellung 746 Stücke
Lieferzeit 21-28 Tag (e)