ES3DHE3_A/H
ES3DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
verfügbar/auf Bestellung
auf Bestellung 33 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details ES3DHE3_A/H
Description: DIODE GEN PURP 200V 3A DO214AB, Reverse Recovery Time (trr): 30ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A, Current - Average Rectified (Io): 3A, Base Part Number: ES3D, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Voltage - DC Reverse (Vr) (Max): 200V, Diode Type: Standard, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Current - Reverse Leakage @ Vr: 10µA @ 200V.
Preis ES3DHE3_A/H ab 0.94 EUR bis 1.8 EUR
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 Hersteller: Vishay Semiconductor Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB Reverse Recovery Time (trr): 30ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Current - Average Rectified (Io): 3A Base Part Number: ES3D Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 45pF @ 4V, 1MHz Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Current - Reverse Leakage @ Vr: 10µA @ 200V
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auf Bestellung 1438 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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