ES3GB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9500 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 9500 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details ES3GB
Description: DIODE GEN PURP 400V 3A DO214AA, Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 41pF @ 4V, 1MHz, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Diode Type: Standard, Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Preis ES3GB ab 0.045 EUR bis 0.64 EUR
 Hersteller: MDD Description: DIODE GEN PURP 400V 3A SMB Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) 
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auf Bestellung 153000 Stücke Lieferzeit 21-28 Tag (e) |
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ES3GB Hersteller: Good-Ark Rectifier Diode Switching 400V 3A 35ns 2-Pin SMB
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auf Bestellung 4999 Stücke Lieferzeit 14-21 Tag (e) |
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 Hersteller: Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 3A DO214AA Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 41pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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