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Technische Details FC6546010R Panasonic
Description: MOSFET 2N-CH 60V 0.1A SMINI6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V, Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 1µA, Supplier Device Package: SMini6-F3-B.
Weitere Produktangebote FC6546010R
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FC6546010R | Panasonic Electronic Components |
Description: MOSFET 2N-CH 60V 0.1A SMINI6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: SMini6-F3-B |
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| FC6546010R |
Hersteller: Panasonic Electronic Components
Description: MOSFET 2N-CH 60V 0.1A SMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SMini6-F3-B
Description: MOSFET 2N-CH 60V 0.1A SMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SMini6-F3-B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH