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FCB099N65S3

FCB099N65S3 onsemi

fcb099n65s3-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+8.43 EUR
1600+ 7.22 EUR
2400+ 6.8 EUR
Mindestbestellmenge: 800
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Technische Details FCB099N65S3 onsemi

Description: MOSFET N-CH 650V 30A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 740µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V.

Weitere Produktangebote FCB099N65S3 nach Preis ab 6.84 EUR bis 14.04 EUR

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FCB099N65S3 FCB099N65S3 Hersteller : onsemi fcb099n65s3-d.pdf Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
auf Bestellung 2866 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.96 EUR
10+ 11.73 EUR
100+ 9.49 EUR
Mindestbestellmenge: 2
FCB099N65S3 FCB099N65S3 Hersteller : onsemi FCB099N65S3_D-2311672.pdf MOSFET SF3 650V EASY 99MOHM, D2PAK
auf Bestellung 1588 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.04 EUR
10+ 11.8 EUR
25+ 11.13 EUR
100+ 9.54 EUR
250+ 9.02 EUR
500+ 7.85 EUR
800+ 6.84 EUR
Mindestbestellmenge: 4
FCB099N65S3 Hersteller : ON Semiconductor fcb099n65s3-d.pdf
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
FCB099N65S3 FCB099N65S3 Hersteller : ON Semiconductor fcb099n65s3-d.pdf N Channel Power MOSFET
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