FCB099N65S3 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 2+ | 8.92 EUR |
| 10+ | 6.3 EUR |
| 100+ | 5.02 EUR |
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Technische Details FCB099N65S3 onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 740µA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote FCB099N65S3 nach Preis ab 4.7 EUR bis 10.88 EUR
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FCB099N65S3 | Hersteller : onsemi |
MOSFETs SF3 650V EASY 99MOHM D2PAK |
auf Bestellung 742 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCB099N65S3 | Hersteller : ON Semiconductor |
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auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) |
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FCB099N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 30A D2PAK-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 740µA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
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