auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.42 EUR |
| 10+ | 6.64 EUR |
| 100+ | 4.98 EUR |
| 500+ | 4.93 EUR |
| 800+ | 4.72 EUR |
Produktrezensionen
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Technische Details FCB099N65S3 onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 740µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V.
Weitere Produktangebote FCB099N65S3 nach Preis ab 5.38 EUR bis 11 EUR
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FCB099N65S3 | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 30A D2PAK-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V |
auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCB099N65S3 | Hersteller : ON Semiconductor |
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auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) |
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FCB099N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R |
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FCB099N65S3 | Hersteller : ON Semiconductor |
N Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| FCB099N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK Drain current: 30A On-state resistance: 99mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: reel; tape Gate charge: 61nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 75A Mounting: SMD Case: D2PAK Drain-source voltage: 650V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCB099N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 30A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V |
Produkt ist nicht verfügbar |
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| FCB099N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK Drain current: 30A On-state resistance: 99mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: reel; tape Gate charge: 61nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 75A Mounting: SMD Case: D2PAK Drain-source voltage: 650V |
Produkt ist nicht verfügbar |