Produkte > ONSEMI > FCB099N65S3
FCB099N65S3

FCB099N65S3 onsemi


fcb099n65s3-d.pdf Hersteller: onsemi
MOSFETs SF3 650V EASY 99MOHM D2PAK
auf Bestellung 984 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.42 EUR
10+6.64 EUR
100+4.98 EUR
500+4.93 EUR
800+4.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FCB099N65S3 onsemi

Description: MOSFET N-CH 650V 30A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 740µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V.

Weitere Produktangebote FCB099N65S3 nach Preis ab 5.38 EUR bis 11.00 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FCB099N65S3 FCB099N65S3 Hersteller : onsemi fcb099n65s3-d.pdf Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.00 EUR
10+7.41 EUR
100+5.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCB099N65S3 Hersteller : ON Semiconductor fcb099n65s3-d.pdf
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FCB099N65S3 FCB099N65S3 Hersteller : ON Semiconductor fcb099n65s3-d.pdf Trans MOSFET N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB099N65S3 FCB099N65S3 Hersteller : ON Semiconductor fcb099n65s3-d.pdf N Channel Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB099N65S3 Hersteller : ONSEMI fcb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Drain current: 30A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 75A
Mounting: SMD
Case: D2PAK
Drain-source voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB099N65S3 FCB099N65S3 Hersteller : onsemi fcb099n65s3-d.pdf Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB099N65S3 Hersteller : ONSEMI fcb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Drain current: 30A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 75A
Mounting: SMD
Case: D2PAK
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH