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FCB125N65S3

FCB125N65S3 onsemi

fcb125n65s3-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.54 EUR
10+ 9.69 EUR
100+ 7.84 EUR
Mindestbestellmenge: 3
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Technische Details FCB125N65S3 onsemi

Description: MOSFET N-CH 650V 24A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 590µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V.

Weitere Produktangebote FCB125N65S3 nach Preis ab 6.11 EUR bis 11.91 EUR

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FCB125N65S3 FCB125N65S3 Hersteller : onsemi FCB125N65S3_D-2311543.pdf MOSFET SF3 650V EASY 125MOHM, D2PAK
auf Bestellung 3060 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.91 EUR
10+ 10.01 EUR
25+ 8.81 EUR
100+ 8.11 EUR
250+ 7.64 EUR
500+ 7.23 EUR
800+ 6.11 EUR
Mindestbestellmenge: 5
FCB125N65S3 Hersteller : ON Semiconductor fcb125n65s3-d.pdf
auf Bestellung 770 Stücke:
Lieferzeit 21-28 Tag (e)
FCB125N65S3 Hersteller : ON Semiconductor fcb125n65s3-d.pdf Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
FCB125N65S3 FCB125N65S3 Hersteller : onsemi fcb125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Produkt ist nicht verfügbar