FCB125N65S3
Technische Details FCB125N65S3
Description: MOSFET N-CH 650V 24A TO263, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D²PAK-3 (TO-263-3), Vgs(th) (Max) @ Id: 4.5V @ 590µA, Power Dissipation (Max): 181W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
Preis FCB125N65S3 ab 0 EUR bis 0 EUR
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FCB125N65S3 Hersteller: ON Semiconductor Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: ON Semiconductor MOSFET SF3 650V EASY 125MOHM D2PAK
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auf Bestellung 744 Stücke  Lieferzeit 14-28 Tag (e) |
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Hersteller: onsemi MOSFET SF3 650V EASY 125MOHM D2PAK
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auf Bestellung 73 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: onsemi Description: MOSFET N-CH 650V 24A TO263 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK-3 (TO-263-3) Vgs(th) (Max) @ Id: 4.5V @ 590µA Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: onsemi Description: MOSFET N-CH 650V 24A TO263 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK-3 (TO-263-3) Vgs(th) (Max) @ Id: 4.5V @ 590µA Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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