FCB125N65S3

FCB125N65S3

Hersteller: ON Semiconductor

fcb125n65s3-d.pdf
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Technische Details FCB125N65S3

Description: MOSFET N-CH 650V 24A TO263, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D²PAK-3 (TO-263-3), Vgs(th) (Max) @ Id: 4.5V @ 590µA, Power Dissipation (Max): 181W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Preis FCB125N65S3 ab 0 EUR bis 0 EUR

FCB125N65S3
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
fcb125n65s3-d.pdf
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FCB125N65S3
FCB125N65S3
Hersteller: ON Semiconductor
MOSFET SF3 650V EASY 125MOHM D2PAK
FCB125N65S3_D-2311543.pdf
auf Bestellung 744 Stücke
Lieferzeit 14-28 Tag (e)
FCB125N65S3
FCB125N65S3
Hersteller: onsemi
MOSFET SF3 650V EASY 125MOHM D2PAK
FCB125N65S3_D-2311543.pdf
auf Bestellung 73 Stücke
Lieferzeit 14-28 Tag (e)
FCB125N65S3
FCB125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO263
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK-3 (TO-263-3)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
fcb125n65s3-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB125N65S3
FCB125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK-3 (TO-263-3)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
fcb125n65s3-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen