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FCB199N65S3

FCB199N65S3 onsemi / Fairchild

FCB199N65S3_D-2311883.pdf Hersteller: onsemi / Fairchild
MOSFET SuperFET3 650V 199mOhm D2PAK PKG
auf Bestellung 8799 Stücke:
Lieferzeit 112-126 Tag (e)
Anzahl Preis ohne MwSt
6+9.02 EUR
10+ 7.59 EUR
25+ 7.36 EUR
100+ 6.14 EUR
250+ 5.98 EUR
500+ 5.77 EUR
800+ 4.65 EUR
Mindestbestellmenge: 6
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Technische Details FCB199N65S3 onsemi / Fairchild

Description: MOSFET N-CH 650V 14A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.4mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V.

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FCB199N65S3 Hersteller : ON Semiconductor fcb199n65s3-d.pdf
auf Bestellung 650 Stücke:
Lieferzeit 21-28 Tag (e)
FCB199N65S3 FCB199N65S3 Hersteller : ON Semiconductor fcb199n65s3-d.pdf Trans MOSFET N-CH 650V 14A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
FCB199N65S3 FCB199N65S3 Hersteller : ON Semiconductor fcb199n65s3-d.pdf Trans MOSFET N-CH 650V 14A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
FCB199N65S3 FCB199N65S3 Hersteller : onsemi fcb199n65s3-d.pdf Description: MOSFET N-CH 650V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
Produkt ist nicht verfügbar
FCB199N65S3 FCB199N65S3 Hersteller : onsemi fcb199n65s3-d.pdf Description: MOSFET N-CH 650V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
Produkt ist nicht verfügbar