FCB199N65S3 onsemi / Fairchild
auf Bestellung 8749 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.58 EUR |
| 10+ | 4.35 EUR |
| 100+ | 3.2 EUR |
| 500+ | 3.06 EUR |
| 800+ | 2.89 EUR |
Produktrezensionen
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Technische Details FCB199N65S3 onsemi / Fairchild
Description: MOSFET N-CH 650V 14A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.4mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V.
Weitere Produktangebote FCB199N65S3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| FCB199N65S3 | Hersteller : ON Semiconductor |
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auf Bestellung 650 Stücke: Lieferzeit 21-28 Tag (e) |
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FCB199N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 14A 3-Pin(2+Tab) D2PAK T/R |
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FCB199N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 14A 3-Pin(2+Tab) D2PAK T/R |
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| FCB199N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 35A Power dissipation: 98W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.199Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
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FCB199N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 14A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCB199N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 14A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V |
Produkt ist nicht verfügbar |
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| FCB199N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 35A Power dissipation: 98W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.199Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |