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FCB199N65S3

FCB199N65S3 onsemi

fcb199n65s3-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 650V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.53 EUR
10+4.31 EUR
100+3.29 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCB199N65S3 onsemi

Description: MOSFET N-CH 650V 14A D2PAK, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 1.4mA, Power Dissipation (Max): 98W (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.

Weitere Produktangebote FCB199N65S3 nach Preis ab 3.03 EUR bis 5.54 EUR

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FCB199N65S3 FCB199N65S3 Hersteller : onsemi / Fairchild FCB199N65S3-D.PDF MOSFETs SuperFET3 650V 199mOhm D2PAK PKG
auf Bestellung 7449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.54 EUR
10+4.33 EUR
100+3.31 EUR
500+3.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCB199N65S3 Hersteller : ON Semiconductor fcb199n65s3-d.pdf
auf Bestellung 650 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FCB199N65S3 FCB199N65S3 Hersteller : onsemi fcb199n65s3-d.pdf Description: MOSFET N-CH 650V 14A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
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Im Einkaufswagen  Stück im Wert von  UAH