FCB36N60NTM
verfügbar/auf Bestellung
auf Bestellung 646 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 646 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details FCB36N60NTM
Description: MOSFET N-CH 600V 36A D2PAK, Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: FCB36N60, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: D²PAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 312W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 100V, Vgs (Max): ±30V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V.
Preis FCB36N60NTM ab 6.2 EUR bis 21.94 EUR
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FCB36N60NTM Hersteller: ON Semiconductor Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R 
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auf Bestellung 790 Stücke Lieferzeit 14-21 Tag (e) |
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 Hersteller: onsemi / Fairchild MOSFET 600V NChannel MOSFET SupreMOST
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auf Bestellung 393 Stücke Lieferzeit 14-28 Tag (e) |
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FCB36N60NTM Hersteller: ON Semiconductor
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7897 Stücke |
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 Hersteller: ON Semiconductor Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
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800 Stücke |
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FCB36N60NTM Hersteller: ON Semiconductor Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FCB36N60NTM Hersteller: ON Semiconductor Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: ON Semiconductor / Fairchild MOSFET 600V NChannel MOSFET SupreMOST
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auf Bestellung 198 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: onsemi Description: MOSFET N-CH 600V 36A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: onsemi Description: MOSFET N-CH 600V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: onsemi Description: POWER MOSFET, N-CHANNEL, SUPREMO Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Technology: MOSFET (Metal Oxide)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: ON Semiconductor Description: MOSFET N-CH 600V 36A D2PAK Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: FCB36N60 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 312W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 100V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
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auf Bestellung 33263 Stücke Lieferzeit 21-28 Tag (e) |
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