FCB36N60NTM

FCB36N60NTM

Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
fcb36n60n-d.pdf FCB36N60N-D.pdf
verfügbar/auf Bestellung
auf Bestellung 646 Stücke
Lieferzeit 14-21 Tag (e)

19+ 8.81 EUR
20+ 7.78 EUR
100+ 6.2 EUR

Technische Details FCB36N60NTM

Description: MOSFET N-CH 600V 36A D2PAK, Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: FCB36N60, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: D²PAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 312W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 100V, Vgs (Max): ±30V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V.

Preis FCB36N60NTM ab 6.2 EUR bis 21.94 EUR

FCB36N60NTM
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
fcb36n60n-d.pdf FCB36N60N-D.pdf
auf Bestellung 790 Stücke
Lieferzeit 14-21 Tag (e)
13+ 12.46 EUR
17+ 9.15 EUR
FCB36N60NTM
FCB36N60NTM
Hersteller: onsemi / Fairchild
MOSFET 600V NChannel MOSFET SupreMOST
FCB36N60N_D-2311915.pdf
auf Bestellung 393 Stücke
Lieferzeit 14-28 Tag (e)
3+ 21.94 EUR
10+ 19.84 EUR
25+ 18.93 EUR
100+ 16.43 EUR
FCB36N60NTM
Hersteller: ON Semiconductor

fcb36n60n-d.pdf FCB36N60N-D.pdf
7897 Stücke
FCB36N60NTM
FCB36N60NTM
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
3655892526496812fcb36n60n-d.pdf
800 Stücke
FCB36N60NTM
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
fcb36n60n-d.pdf FCB36N60N-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB36N60NTM
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
fcb36n60n-d.pdf FCB36N60N-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB36N60NTM
FCB36N60NTM
Hersteller: ON Semiconductor / Fairchild
MOSFET 600V NChannel MOSFET SupreMOST
FCB36N60N_D-2311915.pdf
auf Bestellung 198 Stücke
Lieferzeit 14-28 Tag (e)
FCB36N60NTM
FCB36N60NTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V
fcb36n60n-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB36N60NTM
FCB36N60NTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V
fcb36n60n-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB36N60NTM
FCB36N60NTM
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPREMO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Technology: MOSFET (Metal Oxide)
FCB36N60N-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB36N60NTM
FCB36N60NTM
Hersteller: ON Semiconductor
Description: MOSFET N-CH 600V 36A D2PAK
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: FCB36N60
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 312W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 100V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
FCB36N60N-D.pdf
auf Bestellung 33263 Stücke
Lieferzeit 21-28 Tag (e)