FCH023N65S3L4 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V
Description: MOSFET N-CH 650V 75A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.59 EUR |
30+ | 30.34 EUR |
120+ | 28.44 EUR |
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Technische Details FCH023N65S3L4 onsemi
Description: MOSFET N-CH 650V 75A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 7.5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V.
Weitere Produktangebote FCH023N65S3L4 nach Preis ab 24.66 EUR bis 37.84 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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FCH023N65S3L4 | Hersteller : onsemi / Fairchild | MOSFETs 650V N-Channel SuperFET III MOSFET |
auf Bestellung 1312 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH023N65S3L4 | Hersteller : ONSEMI |
Description: ONSEMI - FCH023N65S3L4 - Leistungs-MOSFET, n-Kanal, 650 V, 75 A, 0.0195 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 75 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 595 Bauform - Transistor: TO-247 Anzahl der Pins: 4 Produktpalette: SuperFET III Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0195 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4.5 SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH023N65S3L4 | Hersteller : ON Semiconductor |
auf Bestellung 333 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH023N65S3L4 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 75A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH023N65S3L4 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 75A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH023N65S3L4 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 75A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH023N65S3L4 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247 On-state resistance: 19.5mΩ Type of transistor: N-MOSFET Power dissipation: 595W Polarisation: unipolar Kind of package: tube Gate charge: 222nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 300A Mounting: THT Case: TO247 Drain-source voltage: 650V Drain current: 65.8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH023N65S3L4 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247 On-state resistance: 19.5mΩ Type of transistor: N-MOSFET Power dissipation: 595W Polarisation: unipolar Kind of package: tube Gate charge: 222nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 300A Mounting: THT Case: TO247 Drain-source voltage: 650V Drain current: 65.8A |
Produkt ist nicht verfügbar |