FCH043N60 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38A, 10V
Power Dissipation (Max): 592W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12225 pF @ 400 V
auf Bestellung 391 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 27.03 EUR |
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Technische Details FCH043N60 Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 38A, 10V, Power Dissipation (Max): 592W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12225 pF @ 400 V.
Weitere Produktangebote FCH043N60 nach Preis ab 26.94 EUR bis 42.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FCH043N60 | Hersteller : onsemi / Fairchild |
MOSFET SF2 600V 43MOHM F TO247 |
auf Bestellung 423 Stücke: Lieferzeit 14-28 Tag (e) |
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| FCH043N60 | Hersteller : ONSEMI |
Description: ONSEMI - FCH043N60 - Leistungs-MOSFET, n-Kanal, 600 V, 75 A, 0.037 ohm, TO-247 Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 75 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 592 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: SUPERFET II Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.037 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 3.5 SVHC: Lead (17-Jan-2022) |
auf Bestellung 406 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH043N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH043N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH043N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47.5A; Idm: 225A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47.5A Pulsed drain current: 225A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 163nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCH043N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47.5A; Idm: 225A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47.5A Pulsed drain current: 225A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 163nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |