FCH165N60E onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.94 EUR |
| 30+ | 7.87 EUR |
| 120+ | 6.75 EUR |
| 510+ | 6 EUR |
| 1020+ | 5.14 EUR |
| 2010+ | 4.84 EUR |
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Technische Details FCH165N60E onsemi
Description: MOSFET N-CH 600V 23A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V.
Weitere Produktangebote FCH165N60E nach Preis ab 4.93 EUR bis 10.12 EUR
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 69A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FCH165N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 69A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |