
FCH165N60E onsemi

Description: MOSFET N-CH 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 6.62 EUR |
30+ | 4.55 EUR |
120+ | 4.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCH165N60E onsemi
Description: MOSFET N-CH 600V 23A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V.
Weitere Produktangebote FCH165N60E nach Preis ab 5.02 EUR bis 7.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FCH165N60E | Hersteller : onsemi / Fairchild |
![]() |
auf Bestellung 488 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
![]() |
FCH165N60E | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||
FCH165N60E | Hersteller : ONSEMI |
![]() |
Produkt ist nicht verfügbar |