FCH25N60N Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 12.5A, 10V
Power Dissipation (Max): 216W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V
auf Bestellung 6788 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 80+ | 9 EUR |
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Technische Details FCH25N60N Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 2, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 126mOhm @ 12.5A, 10V, Power Dissipation (Max): 216W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V.
Weitere Produktangebote FCH25N60N nach Preis ab 8.27 EUR bis 16.04 EUR
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FCH25N60N | Hersteller : onsemi / Fairchild |
MOSFET 600V N-Channel MOSFET SupreMOS |
auf Bestellung 19 Stücke: Lieferzeit 14-28 Tag (e) |
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FCH25N60N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH25N60N | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 75A Power dissipation: 216W Case: TO247 Gate-source voltage: ±30V On-state resistance: 108mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCH25N60N | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 75A Power dissipation: 216W Case: TO247 Gate-source voltage: ±30V On-state resistance: 108mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |