auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.99 EUR |
10+ | 17.88 EUR |
30+ | 15.17 EUR |
120+ | 14.38 EUR |
270+ | 13.48 EUR |
510+ | 13.04 EUR |
1020+ | 12.58 EUR |
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Technische Details FCHD040N65S3-F155 onsemi
Description: MOSFET N-CH 650V 65A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.7mA, Supplier Device Package: TO-247-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V.
Weitere Produktangebote FCHD040N65S3-F155 nach Preis ab 15.74 EUR bis 22.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FCHD040N65S3-F155 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 65A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-247-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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FCHD040N65S3-F155 | Hersteller : ON Semiconductor |
auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) |
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FCHD040N65S3-F155 | Hersteller : ON Semiconductor | N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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FCHD040N65S3-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 162.5A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 35.4Ω/4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCHD040N65S3-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 162.5A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 35.4Ω/4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |