| Anzahl | Preis |
|---|---|
| 1+ | 19.99 EUR |
| 10+ | 17.88 EUR |
| 30+ | 15.17 EUR |
| 120+ | 14.38 EUR |
| 270+ | 13.48 EUR |
| 510+ | 13.04 EUR |
| 1020+ | 12.58 EUR |
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Technische Details FCHD040N65S3-F155 onsemi
Description: MOSFET N-CH 650V 65A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.5V @ 1.7mA, Power Dissipation (Max): 417W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote FCHD040N65S3-F155 nach Preis ab 20.52 EUR bis 20.52 EUR
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FCHD040N65S3-F155 | onsemi |
 Description: MOSFET N-CH 650V 65A TO247Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| FCHD040N65S3-F155 | ON Semiconductor |
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auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCHD040N65S3-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 65A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.52 EUR |
| FCHD040N65S3-F155 |
|
Hersteller: ON Semiconductor
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH