Technische Details FCMT080N65S3 ON Semiconductor
Description: MOSFET N-CH 650V 38A 4TDFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V, Power Dissipation (Max): 260W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 880µA, Supplier Device Package: 4-TDFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V.
Weitere Produktangebote FCMT080N65S3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FCMT080N65S3 | Hersteller : ON Semiconductor |
 Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm |
Produkt ist nicht verfügbar |
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FCMT080N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 38A 4TDFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 880µA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCMT080N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 38A 4TDFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 880µA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCMT080N65S3 | Hersteller : onsemi |
MOSFET 650V 38A, 80MOHM |
Produkt ist nicht verfügbar |