FCMT080N65S3

FCMT080N65S3

Hersteller: ON Semiconductor

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Technische Details FCMT080N65S3

Description: MOSFET N-CH 650V 38A 4TDFN, Base Part Number: FCMT080, Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Supplier Device Package: 4-TDFN (8x8), Operating Temperature: -55°C ~ 150°C (TJ), Manufacturer: onsemi, Power Dissipation (Max): 260W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2765pF @ 400V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 880µA, Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

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FCMT080N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 38A 4TDFN
Base Part Number: FCMT080
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Supplier Device Package: 4-TDFN (8x8)
Operating Temperature: -55°C ~ 150°C (TJ)
Manufacturer: onsemi
Power Dissipation (Max): 260W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2765pF @ 400V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 880µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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