FCMT080N65S3 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 38A 4TDFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 880µA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.87 EUR |
| 10+ | 6.65 EUR |
| 100+ | 4.87 EUR |
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Technische Details FCMT080N65S3 onsemi
Description: MOSFET N-CH 650V 38A 4TDFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V, Power Dissipation (Max): 260W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 880µA, Supplier Device Package: 4-TDFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V.
Weitere Produktangebote FCMT080N65S3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FCMT080N65S3 | Hersteller : ON Semiconductor |
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auf Bestellung 2805 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCMT080N65S3 | Hersteller : ON Semiconductor |
Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm |
Produkt ist nicht verfügbar |
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| FCMT080N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4 Mounting: SMD Case: TDFN4 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±30V Gate charge: 71nC On-state resistance: 80mΩ Drain current: 38A Drain-source voltage: 650V Power dissipation: 260W Pulsed drain current: 95A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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FCMT080N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 38A 4TDFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 880µA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCMT080N65S3 | Hersteller : onsemi |
MOSFETs 650V 38A, 80MOHM |
Produkt ist nicht verfügbar |
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| FCMT080N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4 Mounting: SMD Case: TDFN4 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±30V Gate charge: 71nC On-state resistance: 80mΩ Drain current: 38A Drain-source voltage: 650V Power dissipation: 260W Pulsed drain current: 95A |
Produkt ist nicht verfügbar |