FCMT250N65S3
verfügbar/auf Bestellung
auf Bestellung 1867 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 1867 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details FCMT250N65S3
Description: MOSFET N-CH 650V 12A POWER88, Packaging: Cut Tape (CT), Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V, Power Dissipation (Max): 90W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: Power88, Package / Case: 4-PowerTSFN, Base Part Number: FCMT250.
Preis FCMT250N65S3 ab 4.97 EUR bis 6.84 EUR
 Hersteller: ON Semiconductor Trans MOSFET N-CH 650V 12A 4-Pin PQFN EP T/R 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FCMT250N65S3 Hersteller: ON Semiconductor
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2590 Stücke |
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Hersteller: ON Semiconductor MOSFET SUPERFET3 650V 12A 250 mOhm
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auf Bestellung 363 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: ON Semiconductor Description: SUPERFET3 650V PQFN88 Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 4-PowerTSFN Supplier Device Package: Power88 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 90W (Tc)
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auf Bestellung 2995 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: ON Semiconductor Description: MOSFET N-CH 650V 12A POWER88 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power88 Package / Case: 4-PowerTSFN Base Part Number: FCMT250
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: ON Semiconductor Description: MOSFET N-CH 650V 12A POWER88 Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power88 Package / Case: 4-PowerTSFN Base Part Number: FCMT250
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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