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FCP11N60

FCP11N60 ONSEMI

FCP11N60.pdf Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 172 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.39 EUR
24+ 3.02 EUR
28+ 2.59 EUR
30+ 2.46 EUR
250+ 2.36 EUR
Mindestbestellmenge: 22
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Technische Details FCP11N60 ONSEMI

Description: MOSFET N-CH 600V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V.

Weitere Produktangebote FCP11N60 nach Preis ab 2.46 EUR bis 7.07 EUR

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FCP11N60 FCP11N60 Hersteller : ONSEMI FCP11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.39 EUR
24+ 3.02 EUR
28+ 2.59 EUR
30+ 2.46 EUR
Mindestbestellmenge: 22
FCP11N60 FCP11N60 Hersteller : onsemi fcpf11n60t-d.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 733 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.05 EUR
50+ 5.58 EUR
100+ 4.78 EUR
500+ 4.25 EUR
Mindestbestellmenge: 4
FCP11N60 FCP11N60 Hersteller : onsemi / Fairchild FCPF11N60T_D-2311865.pdf MOSFET 600V 11A N-CH
auf Bestellung 956 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.07 EUR
10+ 5.98 EUR
50+ 5.64 EUR
100+ 4.81 EUR
500+ 4.32 EUR
1000+ 3.98 EUR
5000+ 3.9 EUR
Mindestbestellmenge: 8
FCP11N60 FCP11N60 Hersteller : ON Semiconductor fcpf11n60t-d.pdf Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
FCP11N60 FCP11N60
Produktcode: 62645 		fcpf11n60t-d.pdf Verschiedene Bauteile > Verschiedene Bauteile 2
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