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FCPF11N60NT

FCPF11N60NT Fairchild Semiconductor

FAIRS46027-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 15191 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
135+5.35 EUR
Mindestbestellmenge: 135
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Technische Details FCPF11N60NT Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V, Power Dissipation (Max): 32.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V.

Weitere Produktangebote FCPF11N60NT nach Preis ab 8.19 EUR bis 11.1 EUR

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FCPF11N60NT FCPF11N60NT Hersteller : onsemi / Fairchild FCPF11N60NT_D-1773722.pdf MOSFET SupreMOS 11A
auf Bestellung 352 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.1 EUR
10+ 9.98 EUR
25+ 9.7 EUR
100+ 8.19 EUR
Mindestbestellmenge: 5
FCPF11N60NT Hersteller : ON Semiconductor FAIRS46027-1.pdf?t.download=true&u=5oefqw fcpf11n60nt-d.pdf
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
FCPF11N60NT FCPF11N60NT Hersteller : ON Semiconductor fcpf11n60nt.pdf Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FCPF11N60NT FCPF11N60NT Hersteller : onsemi fcpf11n60nt-d.pdf Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Produkt ist nicht verfügbar