auf Bestellung 2985 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.5 EUR |
| 10+ | 5.85 EUR |
| 25+ | 5.54 EUR |
| 100+ | 4.11 EUR |
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Technische Details FCU850N80Z onsemi / Fairchild
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 600µA, Supplier Device Package: I-PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V.
Weitere Produktangebote FCU850N80Z nach Preis ab 3.04 EUR bis 3.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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| FCU850N80Z | Hersteller : Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTORPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 600µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCU850N80Z | Hersteller : ON Semiconductor |
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auf Bestellung 11700 Stücke: Lieferzeit 21-28 Tag (e) |