FDB52N20TM
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 35 Stücke
Lieferzeit 7-14 Tag (e)
auf Bestellung 35 Stücke
Lieferzeit 7-14 Tag (e)
Technische Details FDB52N20TM
Description: MOSFET N-CH 200V 52A D2PAK, Power Dissipation (Max): 357W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: onsemi, Base Part Number: FDB52N20, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: D²PAK (TO-263), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).
Preis FDB52N20TM ab 1.69 EUR bis 6.73 EUR
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FDB52N20TM Hersteller: ON Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK Trans FDB52N20TM D2PAK TFDB52n20tm Anzahl je Verpackung: 10 Stücke 
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auf Bestellung 162 Stücke Lieferzeit 7-14 Tag (e) |
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 Hersteller: onsemi / Fairchild MOSFET 200V N-Ch MOSFET
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auf Bestellung 17078 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: ON Semiconductor Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R
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8000 Stücke |
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FDB52N20TM Hersteller: ONSEMI Material: FDB52N20TM SMD N channel transistors
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35 Stücke |
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FDB52N20TM Hersteller: ON Semiconductor Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FDB52N20TM Hersteller: ON Semiconductor Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FDB52N20TM Hersteller: ON Semiconductor Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: ON Semiconductor / Fairchild MOSFET 200V N-Ch MOSFET
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auf Bestellung 2196 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: onsemi Description: MOSFET N-CH 200V 52A D2PAK Power Dissipation (Max): 357W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: onsemi Base Part Number: FDB52N20 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ)
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auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Fairchild Semiconductor Description: POWER FIELD-EFFECT TRANSISTOR, 5 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 357W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2.9pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Manufacturer: Rochester Electronics, LLC
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: onsemi Description: MOSFET N-CH 200V 52A D2PAK Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: onsemi Base Part Number: FDB52N20 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 357W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V
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auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: ON Semiconductor Description: MOSFET N-CH 200V 52A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 357W (Tc) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
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auf Bestellung 1670 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: onsemi Description: POWER FIELD-EFFECT TRANSISTOR, 5 Manufacturer: Rochester Electronics, LLC Packaging: Bulk Part Status: Active
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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