FDB52N20TM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 200V 52A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 800+ | 1.73 EUR |
| 1600+ | 1.61 EUR |
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Technische Details FDB52N20TM onsemi
Description: MOSFET N-CH 200V 52A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.
Weitere Produktangebote FDB52N20TM nach Preis ab 1.66 EUR bis 5.34 EUR
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FDB52N20TM | Hersteller : onsemi / Fairchild |
MOSFETs 200V N-Ch MOSFET |
auf Bestellung 10350 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB52N20TM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 52A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
auf Bestellung 1683 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB52N20TM | Hersteller : ON-Semiconductor |
Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK FDB52N20TM TFDB52n20tm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 102 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB52N20TM | Hersteller : ON-Semiconductor |
Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK FDB52N20TM TFDB52n20tm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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